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href="/news/articlelist/type/3">業(yè)界動(dòng)態(tài)</a> > ESD簡(jiǎn)介（簡(jiǎn)單明了?。?/p> </div> </div> </div>    <div class="88r0aya" id="container"> <section> <article> <h1>ESD簡(jiǎn)介（簡(jiǎn)單明了?。?/h1> <div id="kebd5fi" class="authorTimeSource"> <span>作者：</span> <span>時(shí)間：2022-10-08</span> <span>來(lái)源：IC技能搬運工</span> <link rel="stylesheet" type="text/css"/> <span style="float:right; width:130px;margin-right:0px; text-align:right;"> <div id="ip0ixoc" class="nav0"> <ul> <li><a href="javascript:void(0);"><img src="http://dyxdggzs.com/event/action/images/icon_add_4.png" width="20" border="0" align="absmiddle" />加入技術(shù)交流群</a> <ul> <li style="text-align:center;"><img src="http://dyxdggzs.com/event/company/images/code_1.jpg" width="130"><br />掃碼加入<br />和技術(shù)大咖面對面交流<br />海量資料庫查詢(xún)</li> </ul> </li> </ul> </div> </span> <span style="float:right; width:30px;margin-right:0px; text-align:right;"><a >收藏</a></span> </div> <div id="monbdkd" class="hAd4">  </div> <div id="ifahhf0" class="hAd4_Afinal20a_back">  <iframe id='a890e388' name='a890e388' src='https://ad.eepw.com.cn/www/delivery/afr.php?zoneid=88&cb=INSERT_RANDOM_NUMBER_HERE' frameborder='0' scrolling='no' width='680' height='60'><a target='_blank'><img src='https://ad.eepw.com.cn/www/delivery/avw.php?zoneid=88&cb=INSERT_RANDOM_NUMBER_HERE&n=a635e61e' border='0' alt='' /></a></iframe> </div> <div style="margin-top:28px;"></div> <div id="tl68uki" class="content" id="contentDiv" style="position:relative;"> <div id="kf0vqqc" class="ad_300x180">  </div> <div id="gcmcqae" class="ad_300x180_Afinal13_back">  <iframe id='a225770a' name='a225770a' src='https://ad.eepw.com.cn/www/delivery/afr.php?zoneid=87&cb=INSERT_RANDOM_NUMBER_HERE' frameborder='0' scrolling='no' width='300' height='200'><a target='_blank'><img src='https://ad.eepw.com.cn/www/delivery/avw.php?zoneid=87&cb=INSERT_RANDOM_NUMBER_HERE&n=a576c0a2' border='0' alt='' /></a></iframe> </div> <span id="contentlabels" style="font-size:14px;"><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;">記得小學(xué)時(shí)候的自然課上老師用冬天脫毛衣時(shí)的火花向年少的我們描述靜電的情形，那時(shí)候不禁對大自然肅然起敬。沒(méi)想到很多年之后學(xué)習集成電路課程，又一次跟靜電有了接觸，只是這一次沒(méi)有年少時(shí)的輕松與愉悅。</p>本文引用地址：<a href="http://dyxdggzs.com/article/202210/438849.htm">http://dyxdggzs.com/article/202210/438849.htm</a><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;"><span style="font-weight: bolder;"><a class="contentlabel" href="http://dyxdggzs.com/news/listbylabel/label/靜電放電"><em>靜電放電</em></a>（Electrostatic Discharge, <a class="contentlabel" href="http://dyxdggzs.com/news/listbylabel/label/ESD"><em>ESD</em></a>）很容易造成電子元件或電子系統遭受過(guò)度電應力而被永久破壞</span>。<a class="contentlabel" href="http://dyxdggzs.com/news/listbylabel/label/靜電放電"><em>靜電放電</em></a>破壞的產(chǎn)生，大多數是由于人為因素造成的，但又很難避免。</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;">在芯片制造、生產(chǎn)、測試、搬運等過(guò)程中，靜電會(huì )積累在人體、儀器、設備之中，甚至芯片本身也會(huì )積累靜電，<span style="font-weight: bolder;">這些</span><span style="font-weight: bolder;">靜電一旦在某些情況下形放電通路，那么芯片便有可能遭受高壓、大電流的<a class="contentlabel" href="http://dyxdggzs.com/news/listbylabel/label/靜電放電"><em>靜電放電</em></a>損害。</span></p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;"><span style="font-weight: bolder;">摩擦帶來(lái)的靜電</span></p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;">上下、左右滑動(dòng)可以查看更多內容哦！</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;">如何才能避免靜電放電的危害？一方面需要<span style="font-weight: bolder;">加強工作場(chǎng)所對靜電積累的控制</span>，另一方面<span style="font-weight: bolder;">必須加強集成電路本身對靜電放電的耐受能力</span><span style="font-weight: bolder;">，于是<a class="contentlabel" href="http://dyxdggzs.com/news/listbylabel/label/ESD"><em>ESD</em></a>保護設計成為所有芯片設計時(shí)必須考慮的一部分。</span></p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;"><span style="font-weight: bolder;"><a class="contentlabel" href="http://dyxdggzs.com/news/listbylabel/label/ESD"><em>ESD</em></a>保護的基本認識</span></p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;"><span style="font-weight: bolder;">當兩個(gè)帶有相反電荷的物體相接觸時(shí)就會(huì )發(fā)生放電的現象</span>，而且這種現象在芯片使用和生產(chǎn)中隨處可見(jiàn)。</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;"><span style="font-weight: bolder;">比如摩擦、離子注入等過(guò)程</span>中很容易造成芯片中的靜電積累，當<span style="font-weight: bolder;">積累有電荷的芯片與人體、機械導體、其它芯片接觸</span>時(shí)，就有可能發(fā)生靜電放。</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;">這個(gè)過(guò)程可能<span style="font-weight: bolder;">持續幾納秒到幾百納秒</span>，放電<span style="font-weight: bolder;">電壓可能高達幾百伏甚至上千伏</span>，放電<span style="font-weight: bolder;">電流可能高達數安培甚至數十安培</span>，芯片內的<span style="font-weight: bolder;">器件在這樣高壓、大電流的作用下會(huì )發(fā)生不可逆的破壞</span>，這是需要設計ESD保護電路的根本原因。</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;">在目前CMOS集成電路設計中，<span style="font-weight: bolder;">工藝節點(diǎn)普遍進(jìn)入到亞微米階段</span>，器件特征<span style="font-weight: bolder;">尺寸不斷縮小</span>、<span style="font-weight: bolder;">柵氧厚度不斷減小</span>、<span style="font-weight: bolder;">電路速度要求越來(lái)越高</span>，為了滿(mǎn)足電路性能要求以及克服一些由于特征尺寸減小帶來(lái)的消極問(wèn)題，<span style="font-weight: bolder;">工藝也不斷地得到改進(jìn)</span>。</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;"><span style="font-weight: bolder;">LDD(Lightly Doped Drain，LDD)工藝：</span>為了克服熱載子(Hot-Carrier)注入效應發(fā)展出了LDD工藝與結構。</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;"><span style="font-weight: bolder;">Silicide工藝：</span>為了降低CMOS器件漏極(drain)與源極(source)的寄生電阻(sheet resistance)Rs與Rd, 發(fā)展出了Silicide工藝。</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;"><span style="font-weight: bolder;">Polycide工藝：</span>為了降低CMOS器件柵級的寄生電阻Rg，發(fā)展出了Polycide工藝。</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;"><span style="font-weight: bolder;">Salicide工藝：</span>在更先進(jìn)的工藝中把Silicide與Polycide一起制造，發(fā)展出了所謂的Salicide工藝。</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;">在先進(jìn)工藝中<span style="font-weight: bolder;">更薄的柵氧厚度、更淺的結深以及小的柵、源、漏電阻</span>，使得器件更容易被ESD損壞。</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;">ESD失效至少由以下三個(gè)原因之一導致：<span style="font-weight: bolder;">器件局部過(guò)熱、高電流密度、高電場(chǎng)強度</span>。而且三者之間有一定聯(lián)系，電流密度過(guò)大很容易導致器件結溫升高，進(jìn)而導致器件損壞。</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;">ESD對器件的損壞程度也有一些區別，有可能<span style="font-weight: bolder;">導致器件直接失效</span>，芯片功能喪失，也有可能<span style="font-weight: bolder;">導致器件基本功能保留但是漏電增加的情況</span>，不論哪一種情況<span style="font-weight: bolder;">都是ESD失效的表現</span>。</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;"><span style="font-weight: bolder;">ESD保護能力是一個(gè)"短板"問(wèn)題</span>，芯片的ESD耐受能力是<span style="font-weight: bolder;">由所有ESD保護電路中表現最差的來(lái)決定</span>，所以ESD保護電路設計中一定要考慮提高所有保護電路的抗ESD能力，而不是單單提高某些引腳的抗ESD能力。</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;"><span style="font-weight: bolder;">ESD保護電路是集成電路中專(zhuān)門(mén)用來(lái)抗ESD的電路，可以為ESD電流提供放電通路，以免發(fā)生ESD時(shí)靜電電流進(jìn)入IC內部而造成器件損傷。</span></p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;"><span style="font-weight: bolder;">ESD的模型分類(lèi)</span></p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;">目前根據ESD 產(chǎn)生的原因及其對集成電路放電的方式不同，常見(jiàn)的ESD 被分類(lèi)為下列三類(lèi)（還有一些模式并不常用），分別是：<span style="font-weight: bolder;">人體放電模式(HBM, Human Body Model), 機器放電模式(MM, Machine Model)以及元件充電模式(CDM, Charge Device Model).</span></p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;">在業(yè)界<span style="font-weight: bolder;">2000V的人體放電模式</span>、<span style="font-weight: bolder;">200V的機器放電模式</span>以及<span style="font-weight: bolder;">500V的原件充電模式</span>是芯片ESD耐壓的標準之一，當然不排除一些<span style="font-weight: bolder;">特殊用途的場(chǎng)合會(huì )有更高的ESD耐壓要求</span>。</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;"><span style="font-weight: bolder;">人體放電模式(HBM, Human Body Model)：</span>是指因人體通過(guò)磨擦或其他因素積累了靜電，此時(shí)當人去碰觸IC時(shí)，人體上的靜電便會(huì )經(jīng)由IC的PIN腳進(jìn)入IC內，再經(jīng)由IC放電到地。</p><p style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal; text-indent: 2em; text-align: left;">有關(guān)于HBM的ESD已有工業(yè)測試的標準，用來(lái)判斷IC的ESD可靠程度。上圖中顯示的是HBM的<span style="font-weight: bolder;">等效電路圖</span>，其中人體的<span style="font-weight: bolder;">等效電容定為100pF</span>, 人體的<span style="font-weight: bolder;">等效電阻定為1.5kΩ</span>, 對人體放電模式的更多測試規范可以參考工業(yè)標準。</p><p style="text-align:center"><img src="https://inews.gtimg.com/newsapp_bt/0/13221079825/1000"/></p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">HBM的電流波形如上圖中所示，對于<span style="font-weight: bolder;">2kV的 HBM ESD電壓</span>，通常<span style="font-weight: bolder;">電流峰值在1.2A-1.48A左右</span>，電流上升時(shí)間在<span style="font-weight: bolder;">數ns</span>,<span style="font-weight: bolder;">電流</span><span style="font-weight: bolder;">持續時(shí)間在130ns-170ns之間</span>，這些又會(huì )受到<span style="font-weight: bolder;">環(huán)境濕度</span>、<span style="font-weight: bolder;">溫度</span>、<span style="font-weight: bolder;">不同人群</span>等因素的影響。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">機器放電模式(MM, Machine Model)：</span>是指機器（例如機械手臂）本身積累了靜電，當此機器碰觸IC時(shí)，該靜電便經(jīng)由IC的PIN腳放電。此放電的過(guò)程<span style="font-weight: bolder;">時(shí)間更短</span>，<span style="font-weight: bolder;">電流更大</span>。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><img class="content-picture" src="https://inews.gtimg.com/newsapp_bt/0/13221079826/1000"/></p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">因為大多數機器都是用金屬制造的，所以機器放電模式中的<span style="font-weight: bolder;">等效電阻為0Ω</span>，<span style="font-weight: bolder;">等效電容定為200pF</span>，并且相比于HBM, 等效電路中多出了一個(gè)電感。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">由于機器放電模式的等效電阻為0，故其放電的過(guò)程更短，<span style="font-weight: bolder;">在幾ns到幾十ns的時(shí)間內</span><span style="font-weight: bolder;">會(huì )有數安培的放電電流產(chǎn)生</span>。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><img class="content-picture" src="https://inews.gtimg.com/newsapp_bt/0/13221079827/1000"/></p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">上圖中展示的是有關(guān)<span style="font-weight: bolder;">2kV HBM 與 200V MM的放電電流比較</span>，可以看到雖然HBM的電壓比MM的電壓高很多，但是MM的放電電流卻比HBM的放電電流大很多，因此MM ESD放電對IC的破壞力更大。圖中放電電流波形振動(dòng)的情形，是因為測試機臺導線(xiàn)的雜散電感與電容引起的。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">元件充電模式(CDM, Charge Device Model)：</span>是指IC先因磨擦或其他因素而在IC內部積累了靜電，但在靜電積累的過(guò)程中IC并未受到損傷。這種帶有靜電的IC在處理過(guò)程中，當其PIN腳碰觸到接地面時(shí)，IC內部的靜電便會(huì )經(jīng)由PIN腳自IC內部形成放電，此種模式的放電時(shí)間可能只在<span style="font-weight: bolder;">幾ns內</span>。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><img class="content-picture" src="https://inews.gtimg.com/newsapp_bt/0/13221079828/1000"/></p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">因為IC內部積累的靜電<span style="font-weight: bolder;">會(huì )隨著(zhù)IC本身對地的等效電容而變</span>，而且IC擺放的<span style="font-weight: bolder;">角度</span>與<span style="font-weight: bolder;">位置</span>以及IC所用的<span style="font-weight: bolder;">包裝型式</span>等都會(huì )造成不同的等效電容，多種因素難以確定，因此，有關(guān)<span style="font-weight: bolder;">CDM放電的現象更難被真實(shí)地模擬</span>。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><img class="content-picture" src="https://inews.gtimg.com/newsapp_bt/0/13221079829/1000"/></p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">CDM ESD放電時(shí)間更短、電流峰值更高，導致器件承受的ESD應力更大</span>，相比于前兩種模式，<span style="font-weight: bolder;">CDM更容易導致IC損壞</span>。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">ESD的測試</span></p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">靜電的積累可能是<span style="font-weight: bolder;">正的</span>或<span style="font-weight: bolder;">負的</span>電荷，因此靜電放電測試對同一PIN腳而言是<span style="font-weight: bolder;">具有正、負兩種極性</span>。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">對于每一個(gè)I/O PIN而言，進(jìn)行ESD測試時(shí)，有下列<span style="font-weight: bolder;">四種組合</span>：</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">PS mode:</span>VSS引腳接地，正的ESD電壓出現在I/O PIN并對VSS腳放電，此時(shí)VDD與其它PIN腳浮空。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">NS mode:</span>VSS引腳接地，負的ESD電壓出現在I/O PIN并對VSS腳放電，此時(shí)VDD與其它PIN腳浮空。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">PD mode:</span>VDD引腳接地，正的ESD電壓出現在I/O PIN并對VDD腳放電，此時(shí)VSS與其它PIN腳浮空。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">ND mode:</span>VDD引腳接地，負的ESD電壓出現在I/O PIN并對VDD腳放電，此時(shí)VSS與其它PIN腳浮空。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">上面是針對I/O PIN與電源和地之間發(fā)生ESD的情形，等效原理圖如下所示。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><img class="content-picture" src="https://inews.gtimg.com/newsapp_bt/0/13221079830/1000"/></p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">ESD也可能發(fā)生在任意的I/O引腳之間，若<span style="font-weight: bolder;">兩只PIN腳之間無(wú)直接的相關(guān)電路</span>，靜電放電電流會(huì )<span style="font-weight: bolder;">先經(jīng)由某部分的電路到VDD或VSS電源線(xiàn)上</span><span style="font-weight: bolder;">，</span><span style="font-weight: bolder;">再</span><span style="font-weight: bolder;">由VDD或 VSS電源線(xiàn)到另一引腳流出IC</span>。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">上述的情況在實(shí)際測試中會(huì )很復雜，導致測試工作量的增大，下圖中給出了<span style="font-weight: bolder;">改進(jìn)的Pin-to-Pin測試方法</span>，情形與上述基本類(lèi)似，只是正、負ESD電壓放電發(fā)生在一個(gè)I/O引腳與其他I/O引腳之間，測試這種情況時(shí)電源和地浮空。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><img class="content-picture" src="https://inews.gtimg.com/newsapp_bt/0/13221079831/1000"/></p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">ESD也可能發(fā)生在電源和地的引腳上，這種情況測試時(shí)也<span style="font-weight: bolder;">分正、負兩種情況</span>，測試時(shí)只在電源和地之間加測試信號，其余引腳浮空。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">以上是ESD測試時(shí)常用的測試電路<span style="font-weight: bolder;">等效電路圖</span>，對于有些模<span style="font-weight: bolder;">擬信號引腳的測試也</span><span style="font-weight: bolder;">參考上面的方法分別進(jìn)行</span>。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">ESD失效判斷：</span>IC進(jìn)行ESD測試之后，要判斷其是否已被ESD破壞，以便決定是否進(jìn)一步測試，但是如何判定該IC已被ESD損壞了呢？常用的有下述三種方法：</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">絕對漏電流:</span>當IC進(jìn)行ESD測試后，在其 I/O PIN上加一定電壓，漏電電流超過(guò)規定值，即可認為ESD失效。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">相對I-V漂移:</span>當IC進(jìn)行ESD測試后，其 I/O PIN的I-V曲線(xiàn)漂移超過(guò)規定值，即可認為ESD失效。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">功能判斷:</span>當IC進(jìn)行ESD測試后，其 I/O PIN的功能已經(jīng)不滿(mǎn)足性能規格，即可認為ESD失效。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">需要注意的是：即使是對同一IC而言，不同的ESD失效判斷標準，可能會(huì )得到差距較大的ESD失效電壓，因此ESD失效電壓要在一定的故障判定準則下才有意義。</span></p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">關(guān)于ESD測試的內容做以上簡(jiǎn)單介紹，更具體的ESD測試操作方法有興趣的同學(xué)可以查閱ESD設計相關(guān)文獻。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">ESD保護電路中器件的使用</span></p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">在集成<span style="font-weight: bolder;">電路設計中加入ESD保護電路</span>，當ESD來(lái)的時(shí)候，ESD保護電路發(fā)揮保護效果，避免集成電路內的元件被ESD損傷。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">當ESD電壓出現在芯片PIN腳上時(shí)，位于該PIN腳附近的ESD保護電路必須<span style="font-weight: bolder;">及早地導通來(lái)泄放ESD電流</span>。因此，ESD保護電路所使用的元件必須要具有<span style="font-weight: bolder;">較低的擊</span><span style="font-weight: bolder;">穿電壓</span>或<span style="font-weight: bolder;">較快的導通速度</span>，同時(shí)也需要注意在芯片正常工作時(shí)ESD保護電路<span style="font-weight: bolder;">不能</span><span style="font-weight: bolder;">影響芯片功能</span>。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">在CMOS集成電路中，可用來(lái)做ESD保護的元件如下列所示：</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">電阻(Diffusion or poly resistor)</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">二極管(P-N junction)</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">金屬-氧化物-半導體晶體管(NMOS or PMOS)</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">厚氧化層元件(Field-oxide device)</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">寄生的雙極型晶體管(BJT)</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">寄生的可控硅元件(SCR device)</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">以上器件或<span style="font-weight: bolder;">單一使用實(shí)現ESD保護功能</span>，或<span style="font-weight: bolder;">與其他器件組合使用實(shí)現ESD保護功能</span>，在設計電路時(shí)可以根據代工廠(chǎng)給出的<span style="font-weight: bolder;">ESD設計指導手</span><span style="font-weight: bolder;">冊進(jìn)行ESD保護電路設計或者根據經(jīng)驗選擇合適的ESD器件</span>。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><img class="content-picture" src="https://inews.gtimg.com/newsapp_bt/0/13221079832/1000"/></p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">全芯片的ESD保護電路</span></p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">以上已經(jīng)了解到<span style="font-weight: bolder;">ESD會(huì )發(fā)生在I/O PIN與電源和地之間</span>，也會(huì )<span style="font-weight: bolder;">發(fā)生在不同的I/O PIN之間</span>，也可能<span style="font-weight: bolder;">出現在電源和地之間</span>，因此對于ESD保護電路的設計需要<span style="font-weight: bolder;">考慮所有可能發(fā)生ESD的情形</span>。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><img class="content-picture" src="https://inews.gtimg.com/newsapp_bt/0/13221079833/1000"/></p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;"><span style="font-weight: bolder;">全方面的ESD保護電路設計</span>必須考慮所有可能發(fā)生ESD的情況，上圖中給出了芯片中一個(gè)全面的ESD保護設計的內容，對于電源分布更復雜的混合信號芯片來(lái)說(shuō)，ESD保護電路設計還需要<span style="font-weight: bolder;">考慮不同電源域之間的ESD情形</span>，電路設計和電源布局會(huì )更復雜。</p><p class="one-p" style="margin-top: 0px; margin-bottom: 2em; padding: 0px; line-height: 2.2; overflow-wrap: break-word; font-family: "Microsoft Yahei", Avenir, "Segoe UI", "Hiragino Sans GB", STHeiti, "Microsoft Sans Serif", "WenQuanYi Micro Hei", sans-serif; white-space: normal;">上圖中包含I/O PIN的ESD保護電路以及電源和地之間的ESD Clamp電路，<span style="font-weight: bolder;">具體的電路原理和電路結構在下一次的內容中與PAD一起講</span>，ESD保護電路的設計是一個(gè)<span style="font-weight: bolder;">包</span><span style="font-weight: bolder;">含器件、電路、系統的全方面考慮</span>，不僅需要扎實(shí)的<span style="font-weight: bolder;">理論基礎</span>，也需要<span style="font-weight: bolder;">大量的經(jīng)驗積累</span>。本次小目主要向大家做一次簡(jiǎn)單的ESD內容科普，<span style="font-weight: bolder;">配合完成模擬集成電路設計中的全部流程</span>。</p></span>  <div class="yjc838m" id="coverDiv" class="article_reg" style="width:100%;overflow:hidden;display:none;z-index:10;position:absolute;left:0;background:#fff;"> <center> <img src="https://webstorage.eepw.com.cn/images/display/reg.jpg" border="0" usemap="#Map" /> <map 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